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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories
Preliminary Specifications
FEATURES:
* Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 * Single Voltage Read and Write Operations - 5.0V-only for SST29SF512/010/020/040 - 2.7-3.6V for SST29VF512/010/020/040 * Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption: - Active Current: 10 mA (typical) - Standby Current: 30 A (typical) for SST29SF512/010/020/040 1 A (typical) for SST29VF512/010/020/040 * Sector-Erase Capability - Uniform 128 Byte sectors * Fast Read Access Time: - 55 ns - 70 ns * Latched Address and Data * Fast Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 s (typical) - Chip Rewrite Time: 1 second (typical) for SST29SF/VF512 2 seconds (typical) for SST29SF/VF010 4 seconds (typical) for SST29SF/VF020 8 seconds (typical) for SST29SF/VF040 * Automatic Write Timing - Internal VPP Generation * End-of-Write Detection - Toggle Bit - Data# Polling * TTL I/O Compatibility for SST29SFxxx * CMOS I/O Compatibility for SST29VFxxx * JEDEC Standard - Flash EEPROM Pinouts and command sets * Packages Available - 32-pin PLCC - 32-pin TSOP (8mm x 14mm) - 32-pin PDIP
PRODUCT DESCRIPTION
The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29SFxxx devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VFxxx devices write (Program or Erase) with a 2.73.6V power supply. These devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST29SFxxx and SST29VFxxx devices provide a maximum Byte-Program time of 20 sec. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of at least 10,000 cycles. Data retention is rated at greater than 100 years. The SST29SFxxx and SST29VFxxx devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance
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and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. They also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST29SFxxx and SST29VFxxx devices are offered in 32pin PLCC and 32-pin TSOP packages. A 600 mil, 32-pin PDIP is also offered for SST29SFxxx devices. See Figures 1, 2, and 3 for pinouts.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. SSF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
Device Operation
Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.
edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figure 9 for timing waveforms. Any commands issued during the Sector-Erase operation are ignored.
Chip-Erase Operation
The SST29SFxxx and SST29VFxxx devices provide a Chip-Erase operation, which allows the user to erase the entire memory array to the "1s" state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a sixbyte Software Data Protection command sequence with Chip-Erase command (10H) with address 555H in the last byte sequence. The internal Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 19 for the flowchart. Any commands written during the ChipErase operation will be ignored.
Read
The Read operation of the SST29SFxxx and SST29VFxxx devices are controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 4).
Byte-Program Operation
The SST29SFxxx and SST29VFxxx devices are programmed on a byte-by-byte basis. The Program operation consists of three steps. The first step is the three-byte-load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed, within 20 s. See Figures 5 and 6 for WE# and CE# controlled Program operation timing diagrams and Figure 16 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored.
Write Operation Status Detection
The SST29SFxxx and SST29VFxxx devices provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or Erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The SST29SFxxx and SST29VFxxx offer Sector-Erase mode. The sector architecture is based on uniform sector size of 128 Bytes. The Sector-Erase operation is initiated by executing a six-bytecommand sequence with Sector-Erase command (20H) and sector address (SA) in the last bus cycle. The sector address is latched on the falling edge of the sixth WE# pulse, while the command (20H) is latched on the rising
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
Data# Polling (DQ7)
When the SST29SFxxx and SST29VFxxx devices are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. The device is then ready for the next operation. During internal Erase operation, any attempt to read DQ7 will produce a `0'. Once the internal Erase operation is completed, DQ7 will produce a `1'. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 7 for Data# Polling timing diagram and Figure 17 for a flowchart.
the Program operation, providing optimal protection from inadvertent write operations, e.g., during the system powerup or power-down. Any Erase operation requires the inclusion of six byte load sequence. These devices are shipped with the Software Data Protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to read mode, within TRC.
Product Identification
The Product Identification mode identifies the devices as SST29SF512, SST29SF010, SST29SF020, SST29SF040 and SST29VF512, SST29VF010, SST29VF020, SST29VF040 and manufacturer as SST. This mode may be accessed by software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Table 4 for software operation, Figure 11 for the Software ID Entry and Read timing diagram and Figure 18 for the Software ID Entry command sequence flowchart. TABLE 1: PRODUCT IDENTIFICATION
Address Manufacturer's ID Device ID SST29SF512 SST29VF512 SST29SF010 SST29VF010 SST29SF020 SST29VF020 SST29SF040 SST29VF040 0001H 0001H 0001H 0001H 0001H 0001H 0001H 0001H 20H 21H 22H 23H 24H 25H 13H 14H
T1.1 505
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector or ChipErase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 8 for Toggle Bit timing diagram and Figure 17 for a flowchart.
Data BFH
0000H
Data Protection
The SST29SFxxx and SST29VFxxx devices provide both hardware and software features to protect nonvolatile data from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 2.5V for SST29SFxxx. The Write operation is inhibited when VDD is less than 1.5V. for SST29VFxxx. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down.
Product Identification Mode Exit/Reset
In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to the Read operation. Please note that the Software ID Exit command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 12 for timing waveform and Figure 18 for a flowchart.
Software Data Protection (SDP)
The SST29SFxxx and SST29VFxxx provide the JEDEC approved Software Data Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three byte sequence. The three byte-load sequence is used to initiate
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications FUNCTIONAL BLOCK DIAGRAM
X-Decoder
SuperFlash Memory
Memory Address
Address Buffers & Latches Y-Decoder CE# OE# WE# DQ7 - DQ0
505 ILL B1.1
Control Logic
I/O Buffers and Data Latches
SST29SF/VF512 SST29SF/VF010 SST29SF/VF020 SST29SF/VF040
WE# WE# WE# WE#
VDD
A12
A15
A16
A18
VDD
A12
A15
A16
VDD
A12
A15
A16
NC
VDD
A12
A15
NC
NC
SST29SF/VF040 SST29SF/VF020 SST29SF/VF010 SST29SF/VF512
NC
SST29SF/VF512 SST29SF/VF010 SST29SF/VF020 SST29SF/VF040
A7 A6 A5 A4 A3 A2 A1 A0 DQ0
A7 A6 A5 A4 A3 A2 A1 A0 DQ0
A7 A6 A5 A4 A3 A2 A1 A0 DQ0
A7 A6 A5 A4 A3 A2 A1 A0 DQ0
5 6 7 8 9 10 11 12 13
SST29SF/VF040 SST29SF/VF020 SST29SF/VF010 SST29SF/VF512
4
3
2
1
32 31 30 29 28 27 26 25 24 23 22
NC
A17
NC
A17
A14 A13 A8 A9 A11 OE# A10 CE# DQ7
A14 A13 A8 A9 A11 OE# A10 CE# DQ7
A14 A13 A8 A9 A11 OE# A10 CE# DQ7
A14 A13 A8 A9 A11 OE# A10 CE# DQ7
32-pin PLCC Top View
21 14 15 16 17 18 19 20 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6
505 ILL F02a.3
DQ1
DQ2
VSS
DQ3
DQ4
DQ5 DQ5 DQ5
DQ1
DQ2
VSS
DQ3
DQ4
DQ1
DQ2
VSS
DQ3
DQ4
FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN PLCC
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DQ6
DQ6
DQ6
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
SST29SF/VF040 SST29SF/VF020 SST29SF/VF010 SST29SF/VF512 A11 A9 A8 A13 A14 A17 WE# VDD A18 A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 A17 WE# VDD NC A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC WE# VDD NC A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 NC WE# VDD NC NC A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
SST29SF/VF512 SST29SF/VF010 SST29SF/VF020 SST29SF/VF040 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
Standard Pinout Top View Die Up
505 ILL F01.2
FIGURE 2: PIN ASSIGNMENTS FOR 32-PIN TSOP (8MM
SST29SF040 SST29SF020 SST29SF010 SST29SF512
X
14MM)
SST29SF512 SST29SF010 SST29SF020 SST29SF040
A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
NC NC A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
1 2 3 4 5 32-pin 6 PDIP 7 8 Top View 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VDD WE# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
505 ILL F02b.4
VDD WE# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
VDD WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
VDD WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3
FIGURE 3: PIN ASSIGNMENTS FOR 32-PIN PDIP
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications TABLE 2: PIN DESCRIPTION
Symbol AMS1-A0 DQ7-DQ0 Pin Name Address Inputs Data Input/output Functions To provide memory addresses. During Sector-Erase AMS-A8 address lines will select the sector. To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the Write operations. To provide power supply voltage: 4.5-5.5V for SST29SF512/010/020/040 2.7-3.6V for SST29VF512/010/020/040
CE# OE# WE# VDD VSS NC
Chip Enable Output Enable Write Enable Power Supply Ground No Connection
Pin not connected internally
T2.3 505
1. AMS = Most significant address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020, and A18 for SST29SF/VF040
TABLE 3: OPERATION MODES SELECTION
Mode Read Program Erase Standby Write Inhibit Product Identification Software Mode VIL VIL VIH See Table 4
T3.4 505
CE# VIL VIL VIL VIH X X
OE# VIL VIH VIH X VIL X
WE# VIH VIL VIL X X VIH
DQ DOUT DIN X1 High Z High Z/ DOUT High Z/ DOUT
Address AIN AIN Sector address, XXH for Chip-Erase X X X
1. X can be VIL or VIH, but no other value.
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications TABLE 4: SOFTWARE COMMAND SEQUENCE
Command Sequence Byte-Program Sector-Erase Chip-Erase Software ID Software ID Entry4,5 Exit6 1st Bus Write Cycle Addr1 555H 555H 555H 555H XXH 555H Data AAH AAH AAH AAH F0H AAH 2AAH 55H 555H F0H
T4.4 505
2nd Bus Write Cycle Addr1 2AAH 2AAH 2AAH 2AAH Data 55H 55H 55H 55H
3rd Bus Write Cycle Addr1 555H 555H 555H 555H Data A0H 80H 80H 90H
4th Bus Write Cycle Addr1 BA2 555H 555H Data Data AAH AAH
5th Bus Write Cycle Addr1 2AAH 2AAH Data 55H 55H
6th Bus Write Cycle Addr1 SAX3 555H Data 20H 10H
Software ID Exit6
1. Address format A14-A0 (Hex), Address A15 can be VIL or VIH, but no other value, for the Command sequence for SST29SF/VF512. Addresses A15 - A16 can be VIL or VIH, but no other value, for the Command sequence for SST29SF/VF010. Addresses A15 - A17 can be VIL or VIH, but no other value, for the Command sequence for SST29SF/VF020. Addresses A15 - A18 can be VIL or VIH, but no other value, for the Command sequence for SST29SF/VF040. 2. BA = Program Byte address 3. SAX for Sector-Erase; uses AMS-A7 address lines for SST29SF/VFxxx AMS = Most significant address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020, and A18 for SST29SF/VF040 4. The device does not remain in Software Product ID Mode if powered down. 5. With AMS-A1 =0; SST Manufacturer's ID= BFH, is read with A0 = 0, SST29SF512 Device ID = 20H, is read with A0 = 1 SST29SF512 Device ID = 21H, is read with A0 = 1 SST29SF010 Device ID = 22H, is read with A0 = 1 SST29VF010 Device ID = 23H, is read with A0 = 1 SST29SF020 Device ID = 24H, is read with A0 = 1 SST29SF020 Device ID = 25H, is read with A0 = 1 SST29SF040 Device ID = 13H, is read with A0 = 1 SST29VF040 Device ID = 14H, is read with A0 = 1 6. Both Software ID Exit operations are equivalent
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD + 1.0V Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V Package Power Dissipation Capability (Ta = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range Commercial Industrial
FOR
SST29SF512/010/020/040
VDD 5V10% 5V10%
OPERATING RANGE
Range Commercial Industrial
FOR
SST29VF512/010/020/040
VDD 2.7-3.6V 2.7-3.6V
Ambient Temp 0C to +70C -40C to +85C
Ambient Temp 0C to +70C -40C to +85C
AC CONDITIONS
OF
TEST
30 pF for 55 ns
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . . CL = Output Load . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for 70 ns
See Figures 13, 14, and 15 TABLE 5: DC OPERATING CHARACTERISTICS VDD = 5.0V10% FOR SST29SFXXX
Limits Symbol IDD Parameter Power Supply Current Read Write ISB1 ISB2 ILI ILO VIL VIH VIHC VOL VOH Standby VDD Current (TTL input) Standby VDD Current (CMOS input) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Input High Voltage (CMOS) Output Low Voltage Output High Voltage 2.4 2.0 VDD-0.3 0.4 20 20 3 100 1 10 0.8 mA mA mA A A A V V V V V Min Max Units Test Conditions Address input=VIL/VIH, at f=1/TRC Min VDD=VDD Max CE#=OE#=VIL, WE#=VIH, all I/Os open CE#=WE#=VIL, OE#=VIH CE#=VIH, VDD=VDD Max CE#=VIHC, VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max VDD=VDD Max IOL=2.1 A, VDD=VDD Min IOH=-400 A, VDD=VDD Min
T5.3 505
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications TABLE 6: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V FOR SST29VFXXX
Limits Symbol IDD Parameter Power Supply Current Read Write ISB ILI ILO VIL VIH VIHC VOL VOH Standby VDD Current Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Input High Voltage (CMOS) Output Low Voltage Output High Voltage VDD-0.2 0.7VDD VDD-0.3 0.2 20 20 15 1 10 0.8 mA mA A A A V V V V V Min Max Units Test Conditions Address input=VIL/VIH, at f=1/TRC Min VDD=VDD Max CE#=OE#=VIL, WE#=VIH, all I/Os open CE#=WE#=VIL, OE#=VIH CE#=VIHC, VDD=VDD Max VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max VDD=VDD Max IOL=100 A, VDD=VDD Min IOH=-100 A, VDD=VDD Min
T6.5 505
TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol TPU-READ
1
Parameter Power-up to Read Operation Power-up to Program/Erase Operation
Minimum 100 100
Units s s
T7.1 505
TPU-WRITE1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: CAPACITANCE (Ta = 25C, f=1 Mhz, other pins open)
Parameter CI/O1 CIN
1
Description I/O Pin Capacitance Input Capacitance
Test Condition VI/O = 0V VIN = 0V
Maximum 12 pF 6 pF
T8.1 505
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: RELIABILITY CHARACTERISTICS
Symbol NEND TDR1 ILTH1
1
Parameter Endurance Data Retention Latch Up
Minimum Specification 10,000 100 100 + IDD
Units Cycles Years mA
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78
T9.2 505
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
9
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
AC CHARACTERISTICS
TABLE 10: READ CYCLE TIMING PARAMETERS VDD = 5V10% FOR SST29SFXXX
Symbol TRC TCE TAA TOE TCLZ1 TOLZ1 TCHZ1 TOHZ1 TOH1 Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE# Low to Active Output OE# Low to Active Output CE# High to High-Z Output OE# High to High-Z Output
Output Hold from Address Change
AND
2.7-3.6V
Min 55
FOR
SST29VFXXX
SST29SF/VFxxx-70 Min 70 55 55 30 70 70 35 0 0 20 20 25 25 0 Max Units ns ns ns ns ns ns ns ns ns
T10.5 505
SST29SF/VFxxx-55 Max
0 0
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: PROGRAM/ERASE CYCLE TIMING PARAMETERS VDD = 5V10%V FOR SST29SFXXX AND 2.7-3.6V FOR SST29VFXXX
Symbol TBP TAS TAH TCS TCH TOES TOEH TCP TWP TWPH1 TCPH TDS TDH TSE TSCE
1 1
Parameter Byte-Program Time Address Setup Time Address Hold Time WE# and CE# Setup Time WE# and CE# Hold Time OE# High Setup Time OE# High Hold Time CE# Pulse Width WE# Pulse Width WE# Pulse Width High CE# Pulse Width High Data Setup Time Data Hold Time Software ID Access and Exit Time Sector-Erase Chip-Erase
Min 0 30 0 0 0 10 40 40 30 30 40 0
Max 20
Units s ns ns ns ns ns ns ns ns ns ns ns ns
TIDA1
150 25 100
ns ms ms
T11.6 505
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
10
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
TRC ADDRESS AMS-0
TAA
CE#
TCE
OE# VIH WE# TOLZ
TOE
TOHZ TCHZ HIGH-Z DATA VALID
505 ILL F03.1
DQ7-0
HIGH-Z
TCLZ
TOH DATA VALID
Note: AMS = Most Significant Address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 4: READ CYCLE TIMING DIAGRAM
INTERNAL PROGRAM OPERATION STARTS TBP ADDRESS AMS-0 555 TAH TWP WE# TAS OE# TCH CE# TCS DQ7-0 AA SW0 55 SW1 A0 SW2 DATA BYTE (ADDR/DATA) TWPH TDS 2AA 555 ADDR TDH
505 ILL F04.1
Note: AMS = Most Significant Address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 5: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
11
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
INTERNAL PROGRAM OPERATION STARTS TBP ADDRESS AMS-0 555 TAH TCP CE# TAS OE# TCH WE# TCS DQ7-0 AA SW0 55 SW1 A0 SW2 DATA BYTE (ADDR/DATA) TCPH TDS 2AA 555 ADDR TDH
505 ILL F05.1
Note: AMS = Most Significant Address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 6: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM
ADDRESS AMS-0 TCE CE# TOEH OE# TOE WE# TOES
DQ7
D
D#
D#
D
505 ILL F06.1
Note: AMS = Most Significant Address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 7: DATA# POLLING TIMING DIAGRAM
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
12
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
ADDRESS AMS-0 TCE CE# TOEH OE# TOE TOES
WE#
DQ6
TWO READ CYCLES WITH SAME OUTPUTS 505 ILL F07.1
Note: AMS = Most Significant Address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 8: TOGGLE BIT TIMING DIAGRAM
SIX-BYTE CODE FOR SECTOR-ERASE ADDRESS AMS-0 555 2AA 555 555 2AA SAX
TSE
CE#
OE# TWP WE#
DQ7-0
AA SW0
55 SW1
80 SW2
AA SW3
55 SW4
20 SW5
505 ILL F10.2
Note: The device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 11) AMS = Most significant address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 9: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
13
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
SIX-BYTE CODE FOR CHIP-ERASE ADDRESS AMS-0 555 2AA 555 555 2AA 555
TSCE
CE#
OE# TWP WE#
DQ7-0
AA SW0
55 SW1
80 SW2
AA SW3
55 SW4
10 SW5
505 ILL F17.2
Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 11) Note: AMS = Most Significant Address AMS = A15 for SST29SF/VF512, A16 for SST29SF/VF010, A17 for SST29SF/VF020 and A18 for SST29SF/VF040
FIGURE 10: WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM
Three-Byte Sequence for Software ID Entry ADDRESS A14-0 555 2AA 555 0000 0001
CE#
TIDA
OE# TWP WE# TWPH DQ7-0 AA SW0 55 SW1 90 SW2 TAA BF Device ID
505 ILL F08.2
Note: Device ID = 20H for SST29SF512, 22H for SST29SF010, 24H for SST29SF020, 13H for SST29SF040 21H for SST29VF512, 23H for SST29VF010, 25H for SST29VF020, 14H for SST29VF040
FIGURE 11: SOFTWARE ID ENTRY
AND
READ
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
14
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET
ADDRESS A14-0
555
2AA
555
DQ7-0
AA
55
F0 TIDA
CE#
OE# TWP WE# T WHP SW0 SW1 SW2
505 ILL F21.0
FIGURE 12: SOFTWARE ID EXIT AND RESET
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
15
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
VIHT
INPUT
VIT
REFERENCE POINTS
VOT
OUTPUT
VILT
505 ILL F11.0
AC test inputs are driven at VIHT (3.0 V) for a logic "1" and VILT (0 V) for a logic "0". Measurement reference points for inputs and outputs are VIT (1.5 VDD) and VOT (1.5 VDD). Input rise and fall times (10% 90%) are <10 ns.
Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test
FIGURE 13: AC INPUT/OUTPUT REFERENCE WAVEFORMS
FOR
SST29SFXXX
VIHT
INPUT
VIT
REFERENCE POINTS
VOT
OUTPUT
VILT
505 ILL F11.0
AC test inputs are driven at VIHT (0.9 VDD) for a logic "1" and VILT (0.1 VDD) for a logic "0". Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% 90%) are <5 ns.
Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test
FIGURE 14: AC INPUT/OUTPUT REFERENCE WAVEFORMS
FOR
SST29VFXXX
TEST LOAD EXAMPLE FOR SST29SF512/010/020/040 VDD TO TESTER RL HIGH
TEST LOAD EXAMPLE FOR SST29VF512/010/020/040
TO TESTER
TO DUT CL
TO DUT CL RL LOW
505 ILL F12b.2
505 ILL F12.2
FIGURE 15: TEST LOAD EXAMPLES
(c)2001 Silicon Storage Technology, Inc. S71160-05-000 5/01 505
16
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
Start
Load data: AAH Address: 555H
Load data: 55H Address: 2AAH
Load data: A0H Address: 555H
Load Byte Address/Byte Data
Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed
505 ILL F13.1
FIGURE 16: BYTE-PROGRAM ALGORITHM
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
17
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
Internal Timer ByteProgram/Erase Initiated
Toggle Bit ByteProgram/Erase Initiated
Data# Polling ByteProgram/Erase Initiated
Wait TBP, TSCE, or TSE
Read byte
Read DQ7
Program/Erase Completed
Read same byte
No
Is DQ7 = true data? Yes
No
Does DQ6 match? Yes
Program/Erase Completed
Program/Erase Completed
505 ILL F14.0
FIGURE 17: WAIT OPTIONS
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
18
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
Software ID Entry Command Sequence
Software ID Exit & Reset Command Sequence
Load data: AAH Address: 555H
Load data: AAH Address: 555H
Load data: F0H Address: XXH
Load data: 55H Address: 2AAH
Load data: 55H Address: 2AAH
Wait TIDA
Load data: 90H Address: 555H
Load data: F0H Address: 555H
Return to normal operation
Wait TIDA
Wait TIDA
Read Software ID
Return to normal operation
505 ILL F15.1
FIGURE 18: SOFTWARE ID COMMAND FLOWCHARTS
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
19
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
Chip-Erase Command Sequence Load data: AAH Address: 555H
Sector-Erase Command Sequence Load data: AAH Address: 555H
Load data: 55H Address: 2AAH
Load data: 55H Address: 2AAH
Load data: 80H Address: 555H
Load data: 80H Address: 555H
Load data: AAH Address: 555H
Load data: AAH Address: 555H
Load data: 55H Address: 2AAH
Load data: 55H Address: 2AAH
Load data: 10H Address: 555H
Load data: 20H Address: SAX
Wait TSCE
Wait TSE
Chip erased to FFH
Sector erased to FFH
505 ILL F19.2
FIGURE 19: ERASE COMMAND SEQUENCE
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
20
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications Device SST29xFxxx Speed - XXX Suffix1 XX Suffix2 XX Package Modifier H = 32 pins Numeric = Die modifier Package Type N = PLCC W = TSOP (die up) (8mm x 14mm) P = PDIP Temperature Range C = Commercial = 0C to +70C I = Industrial = -40C to +85C Minimum Endurance 4 = 10,000 cycles Read Access Speed 55 = 55 ns 70 = 70 ns Device Density 512 = 512 Kilobit 010 = 1 Megabit 020 = 2 Megabit 040 = 4 Megabit Voltage S = 5V10% V = 2.7-3.6V
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
21
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications SST29SF512 Valid combinations SST29SF512-55-4C-NH SST29SF512-70-4C-NH SST29SF512-55-4I-NH SST29SF512-70-4I-NH SST29SF512-55-4C-WH SST29SF512-70-4C-WH SST29SF512-55-4I-WH SST29SF512-70-4I-WH SST29SF512-70-4C-PH
SST29VF512 Valid combinations SST29VF512-55-4C-NH SST29VF512-70-4C-NH SST29VF512-55-4I-NH SST29VF512-70-4I-NH SST29VF512-55-4C-WH SST29VF512-70-4C-WH SST29VF512-55-4I-WH SST29VF512-70-4I-WH
SST29SF010 Valid combinations SST29SF010-55-4C-NH SST29SF010-70-4C-NH SST29SF010-55-4I-NH SST29SF010-70-4I-NH SST29SF010-55-4C-WH SST29SF010-70-4C-WH SST29SF010-55-4I-WH SST29SF010-70-4I-WH SST29SF010-70-4C-PH
SST29VF010 Valid combinations SST29VF010-55-4C-NH SST29VF010-70-4C-NH SST29VF010-55-4I-NH SST29VF010-70-4I-NH SST29VF010-55-4C-WH SST29VF010-70-4C-WH SST29VF010-55-4I-WH SST29VF010-70-4I-WH
SST29SF020 Valid combinations SST29SF020-55-4C-NH SST29SF020-70-4C-NH SST29SF020-55-4I-NH SST29SF020-70-4I-NH SST29SF020-55-4C-WH SST29SF020-70-4C-WH SST29SF020-55-4I-WH SST29SF020-70-4I-WH SST29SF020-70-4C-PH
SST29VF020 Valid combinations SST29VF020-55-4C-NH SST29VF020-70-4C-NH SST29VF020-55-4I-NH SST29VF020-70-4I-NH SST29VF020-55-4C-WH SST29VF020-70-4C-WH SST29VF020-55-4I-WH SST29VF020-70-4I-WH
SST29SF040 Valid combinations SST29SF040-55-4C-NH SST29SF040-70-4C-NH SST29SF040-55-4I-NH SST29SF040-70-4I-NH SST29SF040-55-4C-WH SST29SF040-70-4C-WH SST29SF040-55-4I-WH SST29SF040-70-4I-WH SST29SF040-70-4C-PH
SST29VF040 Valid combinations SST29VF040-55-4C-NH SST29VF040-70-4C-NH SST29VF040-55-4I-NH SST29VF040-70-4I-NH
Example:
SST29VF040-55-4C-WH SST29VF040-70-4C-WH SST29VF040-55-4I-WH SST29VF040-70-4I-WH
Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
S71160-05-000 5/01 505
(c)2001 Silicon Storage Technology, Inc.
22
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
.485 .495 .447 .453 .042 .048
2 1 32
SIDE VIEW
.106 .112 .020 R. MAX. .023 x 30 .029 .030 R. .040
BOTTOM VIEW
Optional Pin #1 Identifier
.042 .048 .585 .595 .547 .553 .026 .032
.013 .021 .400 BSC
.490 .530
.050 BSC. .015 Min. .050 BSC. .125 .140 .075 .095 .026 .032
Note:
1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 32.PLCC.NH-ILL.2 4. Coplanarity: 4 mils.
32-PIN PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH
Pin # 1 Identifier 1.05 0.95 .50 BSC
8.10 7.90
.270 .170
12.50 12.30
0.15 0.05
0.70 0.50
14.20 13.80
32.TSOP-WH-ILL.4
Note:
1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (min/max). 3. Coplanarity: 0.1 (.05) mm. 4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads.
32-PIN THIN SMALL OUTLINE PACKAGE (TSOP) 8MM SST PACKAGE CODE: WH
X
14MM
(c)2001 Silicon Storage Technology, Inc.
S71160-05-000 5/01
505
23
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040 SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
Preliminary Specifications
32
C L
.600 .625
Pin #1 Identifier
.065 .075
1
1.645 1.655 7 4 PLCS.
.530 .550
Base Plane Seating Plane
.015 .050 .120 .150
.170 .200
.008 .012 .600 BSC
0 15
.070 .080
.045 .065
.016 .022
.100 BSC
Note:
1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
32.pdipPH-ILL.2
32-PIN PLASTIC DUAL-IN-LINE PACKAGE (PDIP) SST PACKAGE CODE: PH
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.ssti.com
(c)2001 Silicon Storage Technology, Inc. S71160-05-000 5/01 505
24

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